General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V

• Low gate charge ( typical 9.5 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 150°C maximum junction temperature rating

• Low level gate drive requirements allowing direct operation form logic drivers

• Built-in ESD Protection Diode