IGBT - Field Stop, Trench 650 V, 75 A

文件：532.54 Kbytes Page：10 Pages

650 V、75 A 场截止沟道 IGBT

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Tem

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Tem

IGBT - Field Stop, IV/4 Lead

文件：437.66 Kbytes Page：11 Pages

封装/外壳：TO-247-4 包装：管件 描述：650V/75 FAST IGBT FSIII T 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT, 650 V, 75 A Field Stop Trench

http://115.22.68.60/master/PDF_DATA/ONSEMI/FGH75T65SQDT.PDF

文件：1.0744 Mbytes Page：11 Pages

http://115.22.68.60/master/PDF_DATA/ONSEMI/FGH75T65SQDT.PDF

文件：1.0744 Mbytes Page：11 Pages

封装/外壳：TO-247-3 包装：管件 描述：650V FS4 TRENCH IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，650V，75A，场截止沟槽

Field Stop Trench IGBT

文件：848.49 Kbytes Page：10 Pages

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT

文件：246.44 Kbytes Page：9 Pages

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes Page：9 Pages

Hybrid Field Stop Trench IGBT 650 V, 75 A, TO247

文件：261.649 Kbytes Page：10 Pages