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FGH75T65SQDT-F155中文资料

厂家型号

FGH75T65SQDT-F155

文件大小

809.35Kbytes

页面数量

10

功能描述

IGBT - Field Stop, Trench 650 V, 75 A

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

FGH75T65SQDT-F155数据手册规格书PDF详情

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4th generation IGBTs offer the optimum

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

Features

• Max Junction Temperature TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A

• 100% of the Parts Tested for ILM

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

更新时间:2025-10-30 14:14:00
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ONSEMI/安森美
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7650
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ONsemi安森美
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9850
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