IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), NON SCR, TO247-4L 1200 V, 1.7 V, 40 A

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGH4L40T120SWD device offers the optimum performance with low switching and conduction losses for high efficiency operations in various applications like Solar, UPS and ESS. Features • Maxim

IGBT - Ultra Field Stop 1200 V, 40 A, VCE(Sat) = 1.55V, TO247 4L

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor drive

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-4L 1200 V, 1.4 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Effici

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench