Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TO247 4−lead package, FGH4L40T120SWD device

offers the optimum performance with low switching and conduction

losses for high efficiency operations in various applications like Solar,

UPS and ESS.

Features

• Maximum Junction Temperature − TJ =175°C

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• Smooth and Optimized Switching

• Low Switching Loss

• RoHS Compliant

Typical Applications

• Boost and Inverter in Solar System

• UPS

• Energy Storage System