This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost−effective Ultra Field Stop Trench construction, and provides

superior performance in demanding switching applications, offering

both low on−state voltage and minimal switching loss. The IGBT is

well suited for motor driver applications. Incorporated into the device

is a soft and fast co−packaged free−wheeling diode with a low forward

voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• Maximum Junction Temperature: TJ = 175°C

• Fast and Soft Reverse Recovery Diode

• Optimized for Low VCE(Sat)

Typical Applications

• Solar Inverter and UPS

• Industrial Switching

• Welding