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FGH40N60价格
参考价格：￥13.5343
型号：FGH40N60SFDTU 品牌：Fairchild 备注：这里有FGH40N60多少钱，2025年最近7天走势，今日出价，今日竞价，FGH40N60批发/采购报价，FGH40N60行情走势销售排行榜，FGH40N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600 V, 40 A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ | ONSEMI 安森美半导体 | | ||
600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o | ONSEMI 安森美半导体 | | ||
600V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
IGBT - Field Stop 600 V, 40 A Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
High Current Capability General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o | ONSEMI 安森美半导体 | | ||
600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600 V、40 A、2.3 V、TO-247高速场截止 IGBT | ONSEMI 安森美半导体 | | ||
IGBT，600V，40A，场截止 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
IGBT，场截止，600 V，40 A，1.9 V | ONSEMI 安森美半导体 | | ||
Low VCE(sat) IGBT, High Speed IGBT Short Circuit SOA Capability. 40N60, 40N60A | IXYS 艾赛斯 | | ||
40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance | SILAN 士兰微 | | ||
IGBT 文件：247.74 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Super Junction FREDFET 文件：191.93 Kbytes Page：5 Pages | ADPOW | | ||
Super Junction FREDFET 文件：317.04 Kbytes Page：5 Pages | Microsemi 美高森美 | |
FGH40N60产品属性
- 类型
描述
- 型号
FGH40N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V, 40A Field Stop IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FUJITSU |
23+ |
TQFP |
12000 |
全新原装假一赔十 |
|||
FAI |
0935+ |
TO247 |
5 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
20+ |
TO-247 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FSC |
25+ |
TO-247 |
18000 |
原厂直接发货进口原装 |
|||
FAIRCHILD |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
ON/安森美 |
1823+ |
NA |
15 |
||||
ON/安森美 |
TO-247 |
160 |
|||||
ON |
25+ |
TO-247 |
800 |
原厂原装,价格优势 |
|||
ON/安森美 |
2020+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
FGH40N60规格书下载地址
FGH40N60参数引脚图相关
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FGH40N60数据表相关新闻
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支持实单 价格优势 有单必成
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原装现货 原厂正品 假一罚十
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FGH15T120SMD
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-31FGH40T120SMD百分百原装现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-12FGH40N60SFDTU
650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
2020-6-29
DdatasheetPDF页码索引
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