位置：首页 > IC中文资料第5740页 > FGH40N60
FGH40N60价格
参考价格：￥13.5343
型号：FGH40N60SFDTU 品牌：Fairchild 备注：这里有FGH40N60多少钱，2025年最近7天走势，今日出价，今日竞价，FGH40N60批发/采购报价，FGH40N60行情走势销售排行榜，FGH40N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat | Fairchild 仙童半导体 |   | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
600 V, 40 A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Lo | Fairchild 仙童半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S | ONSEMI 安森美半导体 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturat | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junc | Fairchild 仙童半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ | ONSEMI 安森美半导体 | | ||
600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o | ONSEMI 安森美半导体 | | ||
600V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | Fairchild 仙童半导体 | | ||
600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | Fairchild 仙童半导体 | | ||
600V, 40A Field Stop IGBT General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati | Fairchild 仙童半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop 600 V, 40 A Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability | ONSEMI 安森美半导体 | | ||
High Current Capability General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
600 V, 40 A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | Fairchild 仙童半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
600 V、40 A、1.9 V、TO-247场截止 IGBT | ONSEMI 安森美半导体 | | ||
600 V、40 A、1.9 V、TO-247场截止 IGBT | ONSEMI 安森美半导体 | | ||
IGBT，600V，40A，场截止 | ONSEMI 安森美半导体 | | ||
Low VCE(sat) IGBT, High Speed IGBT Short Circuit SOA Capability. 40N60, 40N60A | IXYS 艾赛斯 | | ||
40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance | SILAN 士兰微 | | ||
IGBT 文件：247.74 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Super Junction FREDFET 文件：191.93 Kbytes Page：5 Pages | ADPOW | | ||
Super Junction FREDFET 文件：317.04 Kbytes Page：5 Pages | Microsemi 美高森美 | |
FGH40N60产品属性
- 类型
描述
- 型号
FGH40N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V, 40A Field Stop IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild(飞兆/仙童) |
24+ |
N/A |
12548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ON/仙童 |
24+ |
TO-247 |
13500 |
只做原装只有原装假一罚百可开增值税票 |
|||
FAIRCHILD |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
ON |
23+ |
TO-247 |
3570 |
正规渠道,只有原装! |
|||
ON/安森美 |
1823+ |
NA |
15 |
||||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON(安森美) |
24+ |
TO-247AC |
8183 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
FAIRCHILD |
24+ |
TO-247 |
12000 |
现货,来电咨询 |
|||
ON/安森美 |
2021+ |
TO-247 |
9000 |
原装现货,随时欢迎询价 |
FGH40N60芯片相关品牌
FGH40N60规格书下载地址
FGH40N60参数引脚图相关
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- fr107
- fpga开发板
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- FGP6007
- FGP50D
- FGP50C
- FGP50B
- FGP30D
- FGP30C
- FGP30B
- FGP20D
- FGP20C
- FGP20B
- FGP10D
- FGP10C
- FGP10B
- FGM7632
- FGM633
- FGM623S
- FGM622S
- FGM603
- FGI3236
- FGH50T65UPD
- FGH50N6S2D
- FGH50N3
- FGH40T65UPD
- FGH40T65SPD_F155
- FGH40T65SHDF_F155
- FGH40T65SHD_F155
- FGH40T120SMDL4
- FGH40T120SMD_F155
- FGH40T120SMD
- FGH40T100SMD_F155
- FGH40T100SMD
- FGH40N65UFDTU
- FGH40N60UFTU
- FGH40N60UFDTU
- FGH40N60SMDF
- FGH40N60SMD_F085
- FGH40N60SMD
- FGH40N60SFTU
- FGH40N60SFDTU
- FGH40N120ANTU
- FGH30T65UPDT_F155
- FGH30S130P
- FGH30N60LSDTU
- FGH25T120SMD_F155
- FGH25N120FTDS
- FGH20N60UFDTU
- FGH20N60SFDTU
- FGH15T120SMD_F155
- FGH0V474ZF
- FGH0H105ZF
- FGGY
- FGG.4B.324.CLAD12Z
- FGG.4B.316.YL
- FGG.3P.310.PLYD85
- FGG.3K.8H2.CJCK111
- FGG.3K.324.CLAC11
- FGG.3K.314.CYCC80
- FGG.3K.303.CYCC11
- FGG.3B.846.CLCM51Z
- FG-FGR
- FGF506R
- FGF506D
- FGF4007
- FGF4006
- FGF4005
- FGF4004
- FGF4003
- FGF4002
- FGF4001
- FGF2007
- FGF2006
- FGF2005
- FGF2004
- FGF2003
- FGF2002
- FGF2001
- FGF1B
- FGD4536
- FGD2N40
FGH40N60数据表相关新闻
FGH40N60SMD IGBT 晶体管 600V, 40A Field Stop IGBT
支持实单 价格优势 有单必成
2022-3-30FGD5T120SH IGBT 晶体管 1200V 5A Field Stop Trench IGBT
原装现货 原厂正品 假一罚十
2022-3-30FGH15T120SMD
FGH15T120SMD
2021-9-7FGA60N65SMD只有原装深圳现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-31FGH40T120SMD百分百原装现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-12FGH40N60SFDTU
650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
2020-6-29
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
