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FGH40N60价格
参考价格：￥13.5343
型号：FGH40N60SFDTU 品牌：Fairchild 备注：这里有FGH40N60多少钱，2024年最近7天走势，今日出价，今日竞价，FGH40N60批发/采购报价，FGH40N60行情走势销售排行榜，FGH40N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInverter,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
IGBT-FieldStop600V,40A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
IGBT-FieldStop600V,40A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInverter,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welder,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •MaximumJunc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
IGBT-FieldStop600V,40A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •MaximumJunctionTemperature:TJ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighCurrentCapability GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewsesriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsaturati | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
LowVCE(sat)IGBT,HighSpeedIGBT ShortCircuitSOACapability. 40N60,40N60A | IXYS IXYS Integrated Circuits Division |  | | |
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
IGBT 文件：247.74 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SuperJunctionFREDFET 文件：191.93 Kbytes Page：5 Pages | ADPOW Advanced Power Technology |  | | |
SuperJunctionFREDFET 文件：317.04 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
FGH40N60产品属性
- 类型
描述
- 型号
FGH40N60
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
600V, 40A Field Stop IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU |
23+ |
TQFP |
12000 |
全新原装假一赔十 |
|||
FAIRCHI |
2020+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美 |
22+ |
NA |
30000 |
我司100%原装正品现货,现货众多欢迎加微信 |
|||
ON(安森美) |
23+ |
TO-247AC |
25900 |
新到现货,只有原装 |
|||
FSC |
17+ |
TO-3P |
9888 |
只做原装,现货库存 |
|||
ON |
21+ |
TO-247 |
1643 |
原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
FAIRCHILD |
17+ |
TO-247 |
529 |
全新原装环保 |
|||
ON/FSC |
22+ |
TO-247 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
FGH40N60芯片相关品牌
FGH40N60规格书下载地址
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FGH40N60数据表相关新闻
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原装现货原厂正品假一罚十
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-31FGH40T120SMD百分百原装现货
焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
2020-12-12FGH40N60SFDTU
650VTO-247-4IGBT晶体管,4.5kVIGBT晶体管,650VTO-247IGBT晶体管,1200VSi300AIGBT晶体管,650VSi100AIGBTTransistorsIGBT晶体管,600VSingleThroughHole40AIGBT晶体管
2020-6-29
DdatasheetPDF页码索引
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