Low VCE(sat) IGBT, High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

Low Vce(sat) IGBT / High Speed IGBT

丝印代码：40N600；600V, 40A, Trench FS II IGBT

Features Trench FSII Technology offering Very low VCE（sat） High speed switching Positive temperature coefficient in VCE（sat） Very tight parameter distribution High ruggedness, temperature stable behavior

丝印代码：40N60NPFD；40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

丝印代码：40N60M2；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

丝印代码：40N60M2；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

丝印代码：40N60M2；N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

丝印代码：40N60M2；N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thank

丝印代码：40N60FL；IGBT

文件：247.74 Kbytes Page：9 Pages

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only

40A, 600V FIELD STOP IGBT

DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance

IGBT

文件：247.74 Kbytes Page：9 Pages

CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM

文件：37.37 Kbytes Page：2 Pages

CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM

CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM

文件：37.37 Kbytes Page：2 Pages

Super Junction FREDFET

文件：191.93 Kbytes Page：5 Pages

Super Junction FREDFET

文件：317.04 Kbytes Page：5 Pages