isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

Super Junction FREDFET

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Super Junction FREDFET

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Super Junction FREDFET

文件：191.93 Kbytes Page：5 Pages

Super Junction FREDFET

文件：317.04 Kbytes Page：5 Pages

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Driv

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

Ultra-Fast IGBT

General Description Fairchild®’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. Features • High Speed Switching • Low Saturation Voltage: VCE(sat)

Ultra-Fast IGBT

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