丝印代码：FGH40N60UF；600 V, 40 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o

600 V, 40 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o

600V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

600 V, 40 A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

600V，40A，场截止 IGBT

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

丝印代码：FGH40N60UFD；IGBT - Field Stop 600 V, 40 A

Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability

IGBT - Field Stop 600 V, 40 A

Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability

600V, 40A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati

IGBT，600V，40A，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机、微波炉、通讯、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关：EOFF =12uJ/A\n•符合 RoHS 标准;

High Current Capability

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Features • High current capability • Low saturati

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600 V, 40 A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT FIELD STOP 600V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Driv

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

Ultra-Fast IGBT

General Description Fairchild®’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. Features • High Speed Switching • Low Saturation Voltage: VCE(sat)

Ultra-Fast IGBT

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