IGBT，600 V，30A，PT

FGH30N60LSD IGBT 使用飞兆半导体的平面技术提供卓越的传导性能，从而为光伏逆变器和 UPS 等低传导损耗为最重要因素的中频开关应用提供最佳性能。 •低饱和电压：VCE(sat) =1.1V @ IC = 30A\n•高输入阻抗\n•低传导损耗;

Low saturation voltage: VCE(sat) =1.1V @ IC = 30A

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Low saturation voltage: VCE(sat) =1.1V @ IC = 30A

文件：714.63 Kbytes Page：9 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

Short Circuit Rated IGBT

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Short Circuit Rated IGBT

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