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FGB5N60UNDF价格
参考价格：￥5.3191
型号：FGB5N60UNDF 品牌：Fairchild 备注：这里有FGB5N60UNDF多少钱，2026年最近7天走势，今日出价，今日竞价，FGB5N60UNDF批发/采购报价，FGB5N60UNDF行情走势销售排行榜，FGB5N60UNDF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGB5N60UNDF | 600V, 5A Short Circuit Rated IGBT 文件：794.43 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 |   | |
FGB5N60UNDF | IGBT，600V，5A，短路额定 | ONSEMI 安森美半导体 | | |
4.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application | UTC 友顺 | | ||
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：242.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
5A, 600V N-CHANNEL POWER MOSFET 文件：254.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.06579 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：396.63 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | |
FGB5N60UNDF产品属性
- 类型
描述
- 型号
FGB5N60UNDF
- 功能描述
IGBT 晶体管 600V 5A NPT IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
1750+ |
TO-263 |
50 |
上传都是百分之百进口原装现货 |
|||
FAIRCHILD/仙童 |
21+ |
TO263 |
1709 |
||||
onsemi(安森美) |
24+ |
TO-263AB |
1471 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
onsemi/安森美 |
两年内 |
NA |
1280 |
实单价格可谈 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
onsemi(安森美) |
25+ |
TO-263AB |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
NA |
6400 |
原装正品,假一罚十! |
|||
FAIRCHILD |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FSC/ON |
23+ |
原包装原封 □□ |
8800 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
FGB5N60UNDF芯片相关品牌
FGB5N60UNDF规格书下载地址
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DdatasheetPDF页码索引
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