Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 8A 60W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

4.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

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5A, 600V N-CHANNEL POWER MOSFET

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Power MOSFET

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N-Channel Power MOSFET

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