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FQPF5N60价格
参考价格:¥2.2547
型号:FQPF5N60C 品牌:Fairchild 备注:这里有FQPF5N60多少钱,2026年最近7天走势,今日出价,今日竞价,FQPF5N60批发/采购报价,FQPF5N60行情走势销售排行榜,FQPF5N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF5N60 | 600V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ | FAIRCHILD 仙童半导体 | ||
FQPF5N60 | 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc | KERSEMI | ||
FQPF5N60 | 600V N-Channel MOSFET | ONSEMI 安森美半导体 | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | |||
功率 MOSFET,N 沟道,QFET®,600 V,4.5 A,2.5 Ω,TO-220F | ONSEMI 安森美半导体 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT 文件:556.04 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | |||
Short Circuit Rated IGBT 文件:615.22 Kbytes Page:8 Pages | FAIRCHILD 仙童半导体 |
FQPF5N60产品属性
- 类型
描述
- 型号
FQPF5N60
- 功能描述
MOSFET 600V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
QFN |
4000 |
郑重承诺只做原装进口现货 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
25+23+ |
TO-220F |
24939 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
HJ替代 |
2011+ |
TO220F |
50000 |
全新原装进口自己库存优势 |
|||
FSC |
2010 |
TO-220 |
8 |
全新原装正品现货 |
|||
FC |
2026+ |
TO-220 |
1000 |
原装正品,假一罚十! |
|||
FSC |
23+ |
TO-220F |
56000 |
||||
FAIRCHILD |
25+ |
TO-220F |
20540 |
保证进口原装现货假一赔十 |
|||
FAIRCHILD |
24+ |
TO-220 |
4200 |
只做原装正品现货 欢迎来电查询15919825718 |
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DdatasheetPDF页码索引
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