600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

N 沟道 QFET® MOSFET 600 V、4.5 A、2.5 Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及电子镇流器。. •4.5 A、600 V、RDS(on)= 2.5 Ω（最大值），需 VGS = 10 V、ID = 2.25 A栅极电荷低（典型值：15nC)\n•低 Crss（典型值6.5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

N-Channel QFET짰 MOSFET 600 V, 4.5 A, 2.5 廓

文件：487.23 Kbytes Page：8 Pages

N-Channel QFET짰 MOSFET 600 V, 4.5 A, 2.5 廓

文件：487.23 Kbytes Page：8 Pages

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

Short Circuit Rated IGBT

文件：556.04 Kbytes Page：7 Pages

Short Circuit Rated IGBT

文件：615.22 Kbytes Page：8 Pages