型号 功能描述 生产厂家 企业 LOGO 操作

600V, SMPS II Series N-Channel IGBT

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode

General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re

Fairchild

仙童半导体

FGB20N6S2T产品属性

  • 类型

    描述

  • 型号

    FGB20N6S2T

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS II Series

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-4 10:30:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Fairchild/ON
22+
TO263AB
9000
原厂渠道,现货配单
FAIRCHILD
2023+
SMD
1054
安罗世纪电子只做原装正品货
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD
25+23+
TO263
23231
绝对原装正品现货,全新深圳原装进口现货
FAIRCHILD/仙童
23+
SOT-263
50000
全新原装正品现货,支持订货
FAIRCHILD
24+
SOT-5785&NBS
2000
只做原装正品现货 欢迎来电查询15919825718
onsemi(安森美)
25+
D2PAK(TO-263)
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
FAIRCHILD/仙童
25+
SOT-263
1531
原装正品,假一罚十!
FAIRCHILD/仙童
23+
35099
原厂授权一级代理,专业海外优势订货,价格优势、品种
onsemi
25+
TO-263-3 D?Pak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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