位置：首页 > IC中文资料第4120页 > FGB20N6S2DT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FGB20N6S2DT产品属性
- 类型
描述
- 型号
FGB20N6S2DT
- 功能描述
IGBT 晶体管 600V N-Ch IGBT SMPS II Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
4781 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD/仙童 |
25+ |
SOT-263 |
1531 |
原装正品,假一罚十! |
|||
FAIRCHILDONSEMICONDUCTOR |
24+ |
NA |
800 |
原装现货,专业配单专家 |
|||
FAIRCHI |
2018+ |
TO263 |
6528 |
承若只做进口原装正品假一赔十! |
|||
FAIRCHILD |
25+23+ |
TO263 |
23231 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHILD |
24+ |
TO263 |
7596 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD |
2023+ |
SMD |
1054 |
安罗世纪电子只做原装正品货 |
|||
FAIRCHILD/仙童 |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAI |
18+ |
SOT263 |
85600 |
保证进口原装可开17%增值税发票 |
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FGB20N6S2DT规格书下载地址
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DdatasheetPDF页码索引
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