位置：首页 > IC中文资料第4120页 > FGB20N6S2DT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FGB20N6S2DT | 600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FGB20N6S2DT产品属性
- 类型
描述
- 型号
FGB20N6S2DT
- 功能描述
IGBT 晶体管 600V N-Ch IGBT SMPS II Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
2023+ |
TO263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
FAIRCHILDONSEMICONDUCTOR |
23+ |
NA |
800 |
原装现货,专业配单专家 |
|||
FAIRCHILD |
21+ |
35200 |
一级代理/放心采购 |
||||
FAIRCHILD/仙童 |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FSC/ON |
23+ |
原包装原封□□ |
46875 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
FAI |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
|||
FAIRCHILD |
23+ |
TO2636LD |
13758 |
全新原装 |
|||
FAIRCHILD/仙童 |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
FAIRCHILD |
22+23+ |
TO263 |
23231 |
绝对原装正品现货,全新深圳原装进口现货 |
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FGB20N6S2DT规格书下载地址
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650VTO-247-4IGBT晶体管,4.5kVIGBT晶体管,650VTO-247IGBT晶体管,1200VSi300AIGBT晶体管,650VSi100AIGBTTransistorsIGBT晶体管,600VSingleThroughHole40AIGBT晶体管
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DdatasheetPDF页码索引
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