型号 功能描述 生产厂家&企业 LOGO 操作
FGB20N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGB20N6S2产品属性

  • 类型

    描述

  • 型号

    FGB20N6S2

  • 功能描述

    IGBT 晶体管 Sgl N-Ch 600V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-6-16 18:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
21+
35200
一级代理/放心采购
FAIRCHILD
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
FAIRCHILD
TO-263
68900
原包原标签100%进口原装常备现货!
FAIRCHIL
08+(pbfree)
TO-263
8866
ON-安森美
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
FAIRCHIL
23+
TO-263
12300
全新原装真实库存含13点增值税票!
FAIRCHILD/仙童
22+
TO-263
25000
只做原装进口现货,专注配单
FAIRCHILD/仙童
23+
TO-263
10000
公司只做原装正品
FAIRCHILD/仙童
22+
TO-263
25000
只做原装进口现货,专注配单
FAIRCHILD
23+
TO-263
49080
##公司主营品牌长期供应100%原装现货可含税提供技术

FGB20N6S2芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

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