丝印代码：FCD4N60；N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω

Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0  • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω

Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0  • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK

SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实现出色低导通电阻和更低栅极电荷性能的高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化传导损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET产品非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX电源及工业电源应用。 •650V @TJ = 150°C\n•典型值 RDS(on) = 1.0Ω\n•超低栅极电荷（典型值 Qg = 12.8nC )\n•低有效输出电容（典型值 Coss.eff = 32pF )\n•100%经过雪崩测试\n•符合RoHS标准;

600V N-Channel Power MOSFET

- -\n封装：TO-252;

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

PowerMOS transistors Avalanche energy rated

文件：80.57 Kbytes Page：9 Pages

PowerMOS transistors Avalanche energy rated

文件：80.57 Kbytes Page：9 Pages