Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：987.64 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages