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型号 功能描述 生产厂家 企业 LOGO 操作
MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

MGP4N60E

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

MGP4N60E产品属性

  • 类型

    描述

  • 型号

    MGP4N60E

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    ON Semiconductor

更新时间:2026-5-20 17:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ON/安森美
23+
TO-220
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
VISHAY/威世
21+
R-1
30000
百域芯优势 实单必成 可开13点增值税
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
VISHAYMAS
25+23+
R-1
51549
绝对原装正品现货,全新深圳原装进口现货
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!
ON/安森美
21+
NA
12820
只做原装,质量保证
VISHAY/威世
24+
R-1
50000
只做原装,欢迎询价,量大价优
ON/安森美
22+
TO
99652
ON
24+
90000

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