位置：首页 > IC中文资料第3897页 > FCD4N60TM
FCD4N60TM价格
参考价格：￥2.9999
型号：FCD4N60TM 品牌：Fairchild 备注：这里有FCD4N60TM多少钱，2026年最近7天走势，今日出价，今日竞价，FCD4N60TM批发/采购报价，FCD4N60TM行情走势销售排行榜，FCD4N60TM报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FCD4N60TM | 600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro | FAIRCHILD 仙童半导体 |   | |
FCD4N60TM | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FAIRCHILD 仙童半导体 | | |
FCD4N60TM | 丝印代码：FCD4N60；N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 1.0 • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 32 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • AC-DC Power Supply • Solar Inverter Description SuperFE | ONSEMI 安森美半导体 | | |
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
FCD4N60TM产品属性
- 类型
描述
- 型号
FCD4N60TM
- 功能描述
MOSFET N-CH/600V/7A/ SuperFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
onsemi |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO252 |
20300 |
ONSEMI/安森美原装特价FCD4N60TM即刻询购立享优惠#长期有货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ONSEMI/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
2223+ |
DPAK-3TO-252-3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
ON/安森美 |
26+ |
D-PAK |
10000 |
十年沉淀唯有原装 |
|||
FAIRCHILD |
21+ |
8080 |
只做原装,质量保证 |
||||
Fairchild(飞兆/仙童) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
FCD4N60TM规格书下载地址
FCD4N60TM参数引脚图相关
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- fr107
- fpga开发板
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- FCE50SG
- FCE4U
- FCE40SG
- FCE34SG
- FCE2U
- FCE26SG
- FCE20SG
- FCE1UA
- FCE1U
- FCE17A15PM240
- FCE17-A15PM-210
- FCE17-A15PB-440
- FCE17-A15PA-450
- FCE17-A15PA-440
- FCE17-A15PA-410
- FCE17-A15AD-290
- FCE17A15AD290
- FCE17-A15AD-250
- FCE16SG
- FCE14SG
- FCE10SG
- FC-E03D
- FCD-ZZ00021
- FCDN614
- FCDN608
- FCDN605
- FCD9N60NTM
- FCD900N60Z
- FCD850N80Z
- FCD820C
- FCD820
- FCD7N60TM_WS
- FCD7N60TM
- FCD7N60
- FCD-62411
- FCD620N60ZF
- FCD600N60Z
- FCD5N60TM_WS
- FCD5N60TM
- FCD5N60
- FCD4N60
- FCD4B14
- FCD380N60E
- FCD2250N80Z
- FCD1300N80Z
- FCD12
- FCD06
- FCD04
- FC-D03D
- FC-CXXD
- FC-CX1D
- FCCSP
- FCCS-5
- FCCS-4
- FCCS-2
- FCCF
- FCC-A-D8
- FCC-A-C8
- FCC5-A-D8
- FCC5-A-C8
- FCC-3A
- FCC365-60
- FCC365-34
- FCC-3
- FCC-2A
- FCC210-50
- FCC210-10
- FCC-2
- FCC2
- FCC-1A
- FC-C03D
- FC-C01D
- FCBGA
- FCB-405
- FCB-310
- FCB-205
- FC-B02D
- FC-AX3D
- FCA-610
- FCA-410
FCD4N60TM数据表相关新闻
FCD850N80Z
FCD850N80Z
2024-2-26FC4010DS/AA-2272 D-Sub触点 Positronic
FC4010DS/AA-2272 D-Sub触点 Positronic
2023-2-2FCB110N65F ;TO263正品货源供应商报价中文资料。
技术课程，原装现货买卖，资料详情
2021-10-20FCI连接器10120667-301LF原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-11FCI连接器61082-083402LF原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-11FCBS0550-智能功率模块（SPM）
一般描述 它是一种先进的智能功率模块（SPM）的飞兆半导体新开发和设计提供非常紧凑，高性能的交流电机驱动器主要是针对低功耗变频驱动的应用程序，比如说冰箱。它结合了优化保护电路和驱动器匹配低损耗的MOSFET。系统的可靠性得到进一步增强，综合欠压锁定和短路保护。高高速内置HVIC提供光耦合器无单电源MOSFET栅极驱动能力，进一步减少整体大小的逆变器系统的设计。每相电流逆变器可监视分别因负分直流端子。 特点 •UL认证No.E209204（SPM27- BA的包） •500伏- 5A型三相MOSFET逆变桥
2013-2-15
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
