Insulated Gate Bipolar Transistor

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.

• Industry Standard TO–220 Package

• High Speed: Eoff = 55 μJ/A typical at 125°C

• High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V

• Low On–Voltage 2.0 V typical at 3.0 A, 125°C

• Robust High Voltage Termination

• ESD Protection Gate–Emitter Zener Diodes