位置：首页 > IC中文资料第3897页 > FCD4N60TF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FCD4N60TF | 600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro | FAIRCHILD 仙童半导体 |   | |
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
FCD4N60TF产品属性
- 类型
描述
- 型号
FCD4N60TF
- 功能描述
MOSFET 600V NCH MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-252AA |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAI |
25+23+ |
TO252 |
74756 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
TDK/东电化 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FAI |
24+ |
50 |
|||||
FAIRCHILD |
22+ |
TO252 |
20000 |
公司只做原装 品质保障 |
|||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD |
11+ |
TO252 |
41 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
23+ |
TO252 |
5117 |
全新原装正品现货,支持订货 |
|||
FCD |
23+ |
SOP18 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
26+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
FCD4N60TF规格书下载地址
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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一般描述 它是一种先进的智能功率模块（SPM）的飞兆半导体新开发和设计提供非常紧凑，高性能的交流电机驱动器主要是针对低功耗变频驱动的应用程序，比如说冰箱。它结合了优化保护电路和驱动器匹配低损耗的MOSFET。系统的可靠性得到进一步增强，综合欠压锁定和短路保护。高高速内置HVIC提供光耦合器无单电源MOSFET栅极驱动能力，进一步减少整体大小的逆变器系统的设计。每相电流逆变器可监视分别因负分直流端子。 特点 •UL认证No.E209204（SPM27- BA的包） •500伏- 5A型三相MOSFET逆变桥
2013-2-15
DdatasheetPDF页码索引
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