Description

The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 24 Volt, 905 MHz Common Base Characteristics

- Output Power = 60 W

- Power Gain = 7.0 dB Min

- Efficiency = 60 Min

• Double Input/Output Matched for Wideband Performance

• Gold Metallization

• Silicon Nitride Passivated