Description

The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 0.4 Watt, 1.8–2.0 GHz

• Class A Characteristics

• Tested to solderability standards:

- IEC-68-2-54

- ANSI/J Std-002-A

• Gold Metallization

• Silicon Nitride Passivated

• Surface Mountable

• Available in Tape and Reel