Description

The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 25 Watts, 935–960 MHz

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated