Description

The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100 lot traceability is standard.

• 45 Watts, 1.8–2.0 GHz

• Class AB Characteristics

• 40 Collector Efficiency at 45 W

• Gold Metallization

• Silicon Nitride Passivated