Description

The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 20 Watts, 1.35–1.85 GHz

• Class C Characteristics

• 40 Min Collector Efficiency at 20 Watts

• Gold Metallization

• Silicon Nitride Passivated