Description

The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 2.5 Watts, 1.8–2.0 GHz

• Class AB Characteristics

• 35 Collector Efficiency at 4 Watts

• Tested to solderability standards:

- IEC-68-2-54

- ANSI/J Std-002-A

• Gold Metallization

• Silicon Nitride Passivated

• Surface Mountable

• Available in Tape and Reel