Description

The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• Specified at 28 Volt, 925 MHz

• Class C Characteristics

• 55 Min Collector Efficiency at 23 Watts

• Gold Metallization

• Silicon Nitride Passivated