Description

The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 30 Watts, 860–900 MHz

• Class AB Characteristics

• 50 Min Collector Efficiency at 30 Watts

• Gold Metallization

• Silicon Nitride Passivated