Description

The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• Class AB Characteristics

• Performance at 960 MHz, 25 VCC

- Output Power = 20 W

- Efficiency = 50 Min

• Gold Metallization

• Silicon Nitride Passivated