Description

The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 25 Volt, 860–900 MHz Characteristics

- Output Power = 85 Watts

- Collector Efficiency = 50 at 85 Watts

- IMD = -30 dBc Max at 60 W(PEP)

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated