Description

The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100 lot traceability is standard.

• 100 Watts, 1.8–2.0 GHz

• Class AB Characteristics

• 40 Collector Efficiency at 100 Watts

• Gold Metallization

• Silicon Nitride Passivated