Description

The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 40 Watts, 915–960 MHz

• Class AB Characteristics

• 50 Collector Efficiency at 40 Watts

• Gold Metallization

• Silicon Nitride Passivated