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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800 | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 |   | |
EN29LV800 | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory | EON 宜扬科技 | | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | |
EN29LV800产品属性
- 类型
描述
- 型号
EN29LV800
- 制造商
EON SILICON SOLUTION INC
- 功能描述
EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CFEON |
25+ |
TSSOP48 |
27220 |
CFEON全新特价EN29LV800CB-70TIP即刻询购立享优惠#长期有货 |
|||
EON |
24+ |
BGA |
8762 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
EON |
24+ |
QR |
9800 |
一级代理/全新原装现货/长期供应! |
|||
EON |
25+ |
30 |
全新原装!优势库存热卖中! |
||||
EON |
24+ |
TSSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
EON |
0551+ |
TSOP48 |
478 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EON |
24+ |
BGA48 |
89758 |
专做存储芯片原装现货 |
|||
CFEON |
25+ |
TSOP |
25000 |
代理原装现货,假一赔十 |
|||
EON |
2016+ |
TSOP48 |
3000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
NEC |
2023+ |
TSOP-48P |
53500 |
正品,原装现货 |
EN29LV800芯片相关品牌
EN29LV800规格书下载地址
EN29LV800参数引脚图相关
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EN29LV800数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
DdatasheetPDF页码索引
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