型号 功能描述 生产厂家 企业 LOGO 操作
EN29LV800AT-55RTI

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

更新时间:2025-11-5 11:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
25+
TSOP48
2650
原装优势!绝对公司现货
EON
25+
TSOP48
546
原装正品,假一罚十!
EON
24+
TSSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
EON
23+
TSOP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
EON
25+
TSSOP
4500
全新原装、诚信经营、公司现货销售
KANEMATSU
2447
TSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
EON
1922+
TSOP
9865
原装进口现货库存专业工厂研究所配单供货
EON
23+
TSOP48
33822
##公司主营品牌长期供应100%原装现货可含税提供技术
EON/宜扬
23+
TSOP48
50000
全新原装正品现货,支持订货
EON
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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