型号 功能描述 生产厂家 企业 LOGO 操作
EN29LV800AB-55RTCP

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5

EON

宜扬科技

更新时间:2025-11-5 15:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
25+
0415+
78
百分百原装正品 真实公司现货库存 本公司只做原装 可
EON
23+
TSOP
5000
原装正品,假一罚十
EON
25+
415
78
原装正品,假一罚十!
EON
25+
TSOP
2650
原装优势!绝对公司现货
EON
2025+
TSOP48
3768
全新原厂原装产品、公司现货销售
EON
0546+
TSOP
37
原装
EN
24+
TTSOP48
6980
原装现货,可开13%税票
EON
22+
TSOP48
5000
全新原装现货!自家库存!
EON/ESSI
三年内
1983
只做原装正品
EON
23+
TSSOP
5000
专注配单,只做原装进口现货

EN29LV800AB-55RTCP芯片相关品牌

EN29LV800AB-55RTCP数据表相关新闻

  • EN5311QI

    EN5311QI

    2023-12-1
  • EN5322QI

    进口代理

    2023-5-26
  • EN5311QI

    製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx

    2020-10-27
  • EN25QH32B-104HIP

    EN25QH32B-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26
  • EN25QH16-104HIP

    EN25QH16-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26
  • EN25Q32C-104HIP

    EN25Q32C-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26