位置：首页 > IC中文资料 > EN29LV800AT-90TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800AT-90TC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 |   | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
24+ |
8000 |
原装现货,特价销售 |
||||
EON/宜扬 |
2402+ |
TSOP48 |
8324 |
原装正品!实单价优! |
|||
EON |
25+ |
BGA |
45 |
原装正品,假一罚十! |
|||
EON |
24+ |
BGA |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
EON |
05/06+ |
TSOP48 |
2598 |
全新原装100真实现货供应 |
|||
EON |
19+ |
BGA |
20000 |
100 |
|||
EON |
24+ |
TSSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
25+ |
BGA |
2658 |
原装正品!现货供应! |
|||
EON |
23+ |
TSOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
EON |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
EN29LV800AT-90TC芯片相关品牌
EN29LV800AT-90TC规格书下载地址
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EN29LV800AT-90TC数据表相关新闻
EN5311QI
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2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
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EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
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2019-10-26
DdatasheetPDF页码索引
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