位置：首页 > IC中文资料 > EN29LV800AT-70TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800AT-70TC | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 |   | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 | EON 宜扬科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON/宜扬 |
24+ |
NA/ |
546 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
EON |
25+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
EON |
24+ |
SS0P |
5000 |
原厂授权代理 价格绝对优势 |
|||
EON |
2025+ |
TSSOP |
3565 |
全新原厂原装产品、公司现货销售 |
|||
EON |
23+24 |
TSSOP |
29650 |
原装正品优势渠道价格合理.可开13%增值税发票 |
|||
EON/宜扬 |
2402+ |
TSOP48 |
8324 |
原装正品!实单价优! |
|||
EON |
22+ |
TSOP |
2000 |
原装正品现货 |
|||
EON |
04+ |
TSOP/48 |
3200 |
原装现货海量库存欢迎咨询 |
|||
EON |
25+ |
TSOP48 |
546 |
原装正品,假一罚十! |
|||
EON |
24+ |
TSOP |
1000 |
只做原装正品现货 欢迎来电查询15919825718 |
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EN29LV800AT-70TC规格书下载地址
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EN29LV800AT-70TC数据表相关新闻
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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
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