位置：首页 > IC中文资料 > EN29LV800B70RTP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800B70RTP | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 |   | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 5 | EON 宜扬科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
2450+ |
TSOP48 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EON |
23+ |
BGA |
571 |
全新原装正品现货,支持订货 |
|||
EON |
05/06+ |
TSOP48 |
2598 |
全新原装100真实现货供应 |
|||
EON |
23+24 |
BGA |
28950 |
专营原装正品SMD二三极管,电源IC |
|||
EON/宜扬 |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
|||
EON |
24+ |
8000 |
原装现货,特价销售 |
||||
EON |
23+ |
TSOP/48 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
EON |
23+ |
TSOP48 |
33823 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
EON |
2023+ |
TSSOP-48 |
5800 |
进口原装,现货热卖 |
|||
EON |
23+ |
TSSOP-48 |
422 |
现货或发货一天 |
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EN29LV800B70RTP数据表相关新闻
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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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