DMN53D0L价格
参考价格:¥0.2474
型号:DMN53D0L-7 品牌:Diodes 备注:这里有DMN53D0L多少钱,2025年最近7天走势,今日出价,今日竞价,DMN53D0L批发/采购报价,DMN53D0L行情走势销售排行榜,DMN53D0L报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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DMN53D0L | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:338.17 Kbytes Page:5 Pages | DIODES Diodes Incorporated | ||
DualN-ChannelMOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper | DIODES Diodes Incorporated | |||
DualN-ChannelMOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper | DIODES Diodes Incorporated | |||
DualN-ChannelMOSFET DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper | DIODES Diodes Incorporated | |||
50VDUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor | DIODES Diodes Incorporated | |||
50VDUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor | DIODES Diodes Incorporated | |||
50VDUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage • | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage • | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage • | DIODES Diodes Incorporated | |||
N-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa | DIODES Diodes Incorporated | |||
N-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa | DIODES Diodes Incorporated | |||
N-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony | DIODES Diodes Incorporated | |||
DualN-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very | DIODES Diodes Incorporated | |||
DualN-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very | DIODES Diodes Incorporated | |||
DualN-ChannelMOSFET DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:338.17 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:338.17 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:268.51 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:268.51 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:258.22 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:258.22 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:258.22 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:266.74 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:266.74 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:266.74 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-ChannelMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-ChannelMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-ChannelMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:243.45 Kbytes Page:5 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead- | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen | DIODES Diodes Incorporated |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES(美台) |
24+ |
SOT-563 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
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DIODES/美台 |
2023+ |
SOT323 |
2119 |
十五年行业诚信经营,专注全新正品 |
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DIODES/美台 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
|||
DIODES |
24+ |
Tube |
447000 |
郑重承诺只做原装进口现货 |
|||
DIODES/美台 |
23+ |
NA |
6000 |
原装正品假一罚百!可开增票! |
|||
Diodes |
21+ |
SC70 SOT323 |
13880 |
公司只售原装,支持实单 |
|||
DIODES/美台 |
24+ |
SOT323 |
9600 |
原装现货,优势供应,支持实单! |
|||
DIODES |
22+23+ |
SOT-523 |
8000 |
新到现货,只做原装进口 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
diodes |
23+ |
SOT363 |
30000 |
代理全新原装现货,价格优势 |
DMN53D0L规格书下载地址
DMN53D0L参数引脚图相关
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DMN53D0L数据表相关新闻
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2019-3-18
DdatasheetPDF页码索引
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