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位置：首页 > IC中文资料 > DMN53D0L

DMN53D0L价格

参考价格：￥0.2474

型号：DMN53D0L-7 品牌：Diodes 备注：这里有DMN53D0L多少钱，2025年最近7天走势，今日出价，今日竞价，DMN53D0L批发/采购报价，DMN53D0L行情走势销售排行榜，DMN53D0L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DMN53D0L

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：338.17 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-13

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-7

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ-13

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDWQ-7

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ-13

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LQ-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-13

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-7

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ-13

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LTQ-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-13

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-7

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0L-13

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：338.17 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0L-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：338.17 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-13

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：268.51 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LDW-7

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：268.51 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT_15

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：258.22 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-13

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：258.22 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LT-7

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：258.22 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV_15

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：266.74 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-13

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：266.74 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LV-7

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：266.74 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW

N-ChannelMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW_15

N-CHANNELENHANCEMENTMODEMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW-13

N-ChannelMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW-13

N-CHANNELENHANCEMENTMODEMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW-7

N-ChannelMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMN53D0LW-7

N-CHANNELENHANCEMENTMODEMOSFET

文件：243.45 Kbytes Page：5 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
DMB53D0UDW

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead-

DIODESDiodes Incorporated

美台半导体

DIODES
DMB53D0UV

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen

DIODESDiodes Incorporated

美台半导体

DIODES

DMN53D0L供应商更多...

更新时间：2025-8-3 8:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英科美电子有限公司
DMN53D0LV-7
DIODES/美台
2223+
SOT563
26800
只做原装正品假一赔十为客户做到零风险
询价
深圳市粤骏腾电子科技有限公司
DMN53D0LDWQ
DIODES/美台
24+
SOT363
786000
全新原装假一罚十
询价
深圳市凌旭科技有限公司
DMN53D0LV-7
DIODES
2016+
SOT563
15000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市英特法电子科技有限公司
DMN53D0LW-7
DIODES/美台
2023+
SOT-323
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
询价
深圳兆威电子有限公司
DMN53D0LDW-7
DIODES
23+
SOT363
253223
原装正品现货
询价
深圳市利芯伟业科技有限公司
DMN53D0LW-7
Diodes(美台)
2021/2022+
标准封装
12000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
深圳市东来宝电子科技有限公司
DMN53D0LDW-7
DIODES
24+
Tube
447000
郑重承诺只做原装进口现货
询价
深圳市宝芯创电子有限公司
DMN53D0LQ-7
DIODES
21+
SOT23
30000
只做原装,公司现货,提供一站式BOM配单服务!
询价
深圳市斌腾达科技有限公司
DMN53D0LQ-13
Diodes Incorporated
21+
SOT-23
70000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
深圳良洲科技有限公司
DMN53D0L-7
DIODES
两年内
NA
3000
实单价格可谈
询价

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