DMN53D0L价格

参考价格:¥0.2474

型号:DMN53D0L-7 品牌:Diodes 备注:这里有DMN53D0L多少钱,2025年最近7天走势,今日出价,今日竞价,DMN53D0L批发/采购报价,DMN53D0L行情走势销售排行榜,DMN53D0L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DMN53D0L

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:338.17 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODES

Diodes Incorporated

DIODES

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODES

Diodes Incorporated

DIODES

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODES

Diodes Incorporated

DIODES

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •MotorDriving •PowerManagementFunctions •LoadSwitching Featuresa

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features N-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimony

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •DualN-ChannelMOSFET •LowOn-Resistance •Very

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:338.17 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:338.17 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:268.51 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:268.51 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:258.22 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:258.22 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:258.22 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:266.74 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:266.74 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:266.74 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-ChannelMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

文件:243.45 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead-

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen

DIODES

Diodes Incorporated

DIODES
更新时间:2025-5-14 10:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
24+
SOT-563
8498
支持大陆交货,美金交易。原装现货库存。
DIODES/美台
2023+
SOT323
2119
十五年行业诚信经营,专注全新正品
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
DIODES
24+
Tube
447000
郑重承诺只做原装进口现货
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
Diodes
21+
SC70 SOT323
13880
公司只售原装,支持实单
DIODES/美台
24+
SOT323
9600
原装现货,优势供应,支持实单!
DIODES
22+23+
SOT-523
8000
新到现货,只做原装进口
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
diodes
23+
SOT363
30000
代理全新原装现货,价格优势

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