DMN53D0L价格
参考价格：￥0.2474
型号：DMN53D0L-7 品牌：Diodes 备注：这里有DMN53D0L多少钱，2025年最近7天走势，今日出价，今日竞价，DMN53D0L批发/采购报价，DMN53D0L行情走势销售排行榜，DMN53D0L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN53D0L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：338.17 Kbytes Page：5 Pages | DIODES 美台半导体 |   | |
DMN53D0L | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
Dual N-Channel MOSFET Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper | DIODES 美台半导体 | | ||
50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN53D0LDWQ is suitable for | DIODES 美台半导体 | | ||
50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN53D0LDWQ is suitable for | DIODES 美台半导体 | | ||
50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN53D0LDWQ is suitable for | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • | DIODES 美台半导体 | | ||
N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 | | ||
N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 | | ||
N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Dual N-Channel MOSFET • Low On-Resistance • Very | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：338.17 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：338.17 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：268.51 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：268.51 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：266.74 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：266.74 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：266.74 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-Channel MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-Channel MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-Channel MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：243.45 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Totally Lead- | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Lead, Halogen | DIODES 美台半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
25+23+ |
SOT23 |
41982 |
绝对原装正品全新进口深圳现货 |
|||
DIODES |
2016+ |
SOT563 |
15000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
21+ |
SOT-323 |
8080 |
只做原装,质量保证 |
|||
DIODES/美台 |
24+ |
SOT323 |
8950 |
BOM配单专家,发货快,价格低 |
|||
DIODES/美台 |
新年份 |
SOT-23 |
3000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
DIODES(美台) |
24+ |
SOT-563 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
DiodesZetex |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
DIODES/美台 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
|||
DIODES(美台) |
SOT-363-6 |
4809 |
全新原装正品现货可开票 |
DMN53D0L规格书下载地址
DMN53D0L参数引脚图相关
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DdatasheetPDF页码索引
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