型号 功能描述 生产厂家&企业 LOGO 操作
DMN53D0LQ

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •VeryLowGateThresholdVoltage •

DIODES

Diodes Incorporated

DIODES

DualN-ChannelMOSFET

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •DC-DCConverters •PowerManagementFunctions •BatteryOper

DIODES

Diodes Incorporated

DIODES

50VDUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN53D0LDWQissuitablefor

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:338.17 Kbytes Page:5 Pages

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead-

DIODES

Diodes Incorporated

DIODES

N-CHANNELENHANCEMENTMODEMOSFETPLUSNPNTRANSISTOR

Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen

DIODES

Diodes Incorporated

DIODES
更新时间:2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
24+
SOT23
133048
原厂可订货,技术支持,直接渠道。可签保供合同
DIODES/美台
24+
NA/
24054
优势代理渠道,原装正品,可全系列订货开增值税票
DIODES/美台
25+
SOT-23
54648
百分百原装现货 实单必成
DIODES
1611+
SOT23
860
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
24+
SOT-23
880000
明嘉莱只做原装正品现货
DIODES/美台
23+
SOT-23
50000
原装正品 支持实单
DIODES/美台
23+
SOT-23
25630
原装正品
DIODES/美台
21+
NA
30000
百域芯优势 实单必成 可开13点增值税
DIODES/美台
1936+
SOT23
6852
只做原装正品现货或订货!假一赔十!
DIODES/美台
21+
SOT-23
8080
只做原装,质量保证

DMN53D0LQ芯片相关品牌

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