DMN53D0LT价格
参考价格：￥0.0000
型号：DMN53D0LT-7 品牌：DIODES INCORPORATED 备注：这里有DMN53D0LT多少钱，2026年最近7天走势，今日出价，今日竞价，DMN53D0LT批发/采购报价，DMN53D0LT行情走势销售排行榜，DMN53D0LT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN53D0LT | N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 |   | |
DMN53D0LT | N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.\n\t\t\t\t\t\t\n\n\t\t\t\t\t\t\n\n\t\t\t\t\t\t\n\n\n\t\t\t\t\t\n\t\t\t\t\n\t\t\t\n\n\n\n\n\t\t\t\n\t\t\t\t\n\ | DIODES 美台半导体 | | |
N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 | | ||
N-Channel MOSFET Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Driving • Power Management Functions • Load Switching Features a | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
丝印代码：T53；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
丝印代码：T53；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：258.22 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper | DIODES 美台半导体 | | ||
50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMN53D0LDWQ is suitable for | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance • Very Low Gate Threshold Voltage • | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Totally Lead- | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Lead, Halogen | DIODES 美台半导体 | |
DMN53D0LT产品属性
- 类型
描述
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
50 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.2 A
- PD @ TA = +25°C：
N/A W
- RDS(ON) Max @ VGS (10V)：
1600 mΩ
- RDS(ON) Max @ VGS (4.5V)：
2500 mΩ
- RDS(ON) Max @ VGS (2.5V)：
4500 mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
1.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT523
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODEZTX |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
20+ |
SOT523 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
DIODES |
25+ |
N/A |
20000 |
原装 |
|||
DIODES/美台 |
26+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
DIODES/美台 |
2450+ |
SOT523 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Diodes(美台) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
26+ |
SOT523 |
98000 |
原装现货假一罚十 |
|||
DIODES |
24+ |
SOT-523 |
8000 |
新到现货，只做全新原装正品 |
DMN53D0LT芯片相关品牌
DMN53D0LT规格书下载地址
DMN53D0LT参数引脚图相关
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DMN53D0LT数据表相关新闻
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DMN4468LSS
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DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
2021-11-10DMN4031SSD-13
DMN4031SSD-13
2021-10-19
DdatasheetPDF页码索引
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