N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Totally Lead-

N-CHANNEL ENHANCEMENT MODE MOSFET

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Totally Lead-

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：MOSFET NMOS+NPN TRANS SOT-363 分立半导体产品 晶体管 - 特殊用途

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features • N-Channel MOSFET and NPN Transistor in One Package • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected MOSFET Gate up to 2kV • Lead, Halogen

Dual N-Channel MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power Management Functions • Battery Oper

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN53D0LDWQ is suitable for

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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