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CD4002B价格

参考价格:¥0.9678

型号:CD4002BE 品牌:TI 备注:这里有CD4002B多少钱,2026年最近7天走势,今日出价,今日竞价,CD4002B批发/采购报价,CD4002B行情走势销售排行榜,CD4002B报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CD4002B

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CD4002B

2 通道、4 输入、3V 至 18V 或非门

CD4001B, CD4002B, and CD4025B NOR gates provide the system designer with direct implementation of the NOR functionand supplement the existing family of CMOS gates. All inputs and outputs are buffered.\n\n The CD4001B, CD4002B, and CD4025B types are supplied in 14-lead hermetic dual-in-line ceramic p • Propagation delay time = 60 ns (typ.) at CL = 50 pF, VDD = 10 V\n• Standardized symmetrical output characteristics\n• 5-V, 10-V, and 15-V parametric ratings\n• Noise margin (over full package temperature range):      1 V at VDD = 5 V      2 V at VDD = 10 V   2.5 V at VDD = 15 V\n• Meets all requi;

TI

德州仪器

CD4002B

CMOS NOR Gates

文件:206.27 Kbytes Page:5 Pages

TI

德州仪器

CD4002B

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

军用 2 通道、4 输入、3V 至 18V 或非门

CD4001B, CD4002B, and CD4025B NOR gates provide the system designer with direct implementation of the NOR functionand supplement the existing family of CMOS gates. All inputs and outputs are buffered.\n\n The CD4001B, CD4002B, and CD4025B types are supplied in 14-lead hermetic dual-in-line ceramic p • Propagation delay time = 60 ns (typ.) at CL = 50 pF, VDD = 10 V\n• Standardized symmetrical output characteristics\n• 5-V, 10-V, and 15-V parametric ratings\n• Noise margin (over full package temperature range):      1 V at VDD = 5 V      2 V at VDD = 10 V   2.5 V at VDD = 15 V\n• Meets all requi;

TI

德州仪器

CMOS NOR Gate

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre

RENESAS

瑞萨

CMOS NOR Gate

Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f

INTERSIL

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

IC GATE NOR 2CH 4-INP 14DIP

ONSEMI

安森美半导体

封装/外壳:14-DIP(0.300",7.62mm) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14DIP 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14SOIC 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

替换型号 功能描述 生产厂家 企业 LOGO 操作

CMOS NOR Gates

TI

德州仪器

Dual 4-Input NOR(NAND) Gate

NSC

国半

NOR GATE

STMICROELECTRONICS

意法半导体

Dual 4-input NOR Gate

HITACHIHitachi Semiconductor

日立日立公司

Dual 4-input NOR gate

PHILIPS

飞利浦

Dual 4-input NOR gate

PHILIPS

飞利浦

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NOR GATE

RANDE

CD4002B产品属性

  • 类型

    描述

  • Number of channels (#):

    2

  • Supply voltage (Min) (V):

    3

  • Supply voltage (Max) (V):

    18

  • Inputs per channel:

    4

  • IOL (Max) (mA):

    6.8

  • IOH (Max) (mA):

    -6.8

  • Output type:

    Push-Pull

  • Input type:

    Standard CMOS

  • Features:

    Standard speed (tpd > 50ns)

  • Data rate (Max) (Mbps):

    8

  • Rating:

    Catalog

更新时间:2026-7-23 20:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
22+
14SOIC
9000
原厂渠道,现货配单
TI/德州仪器
26+
原封
22102
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
TI/德州仪器
24+
SOP14
8540
只做原装正品现货或订货假一赔十!
TI
25+
SOP14
20000
原装
TI
23+
SOP14
5000
全新原装,支持实单,非诚勿扰
TI
22+
5000
只做原装鄙视假货15118075546
TI
25+
N/A
30000
代理全新原装现货,价格优势
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI(德州仪器)
26+
SO-14-208mil
3600
十二年VIP会员,诚信经营,原装库存·可零售!
TI/德州仪器
23+
SOP14
66600
专业芯片配单原装正品假一罚十

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