位置:首页 > IC中文资料 > CD4002

CD4002价格

参考价格:¥0.9678

型号:CD4002BE 品牌:TI 备注:这里有CD4002多少钱,2026年最近7天走势,今日出价,今日竞价,CD4002批发/采购报价,CD4002行情走势销售排行榜,CD4002报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CD4002

2路4输入或非门

The CD4002 is a dual 4-input NOR gate. The outputs are fully buffered for highest noise immunity and pattern insensitivity to output impedance variations.It operates over a recommended VDD power supply range of 3V to 15V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS • Wide supply voltage range from 3V to 15V\n• Fully static operation\n• 5V, 10V, and 15V parametric ratings\n• Standardized symmetrical output characteristics\n• Inputs and outputs are protected against electrostatic effects\n• Specified from -40℃ to +105℃\n• Packaging information: DIP14/SOP14/TSSOP;

I-COREWUXI i-CORE Electronics Co., Ltd

中微爱芯无锡中微爱芯电子有限公司

CD4002

CD4002M/CD4002C Dual 4-Input NOR Gate, CD4012M/CD4012C Dual 4-Input NAND Gate

General Description\nThese NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide suppl Wide supply voltage range 3.0V to 15V\nLow power 10 nW (typ.)\nHigh noise immunity 0.45 VDD (typ.)Applications\nAutomotive\nData terminals\nInstrumentation\nMedical Electronics\nAlarm system\nIndustrial controls\nRemote metering\nComputers;

TI

德州仪器

CD4002

Dual 4-Input NOR(NAND) Gate

文件:107.87 Kbytes Page:6 Pages

NSC

国半

CD4002

CMOS NOR Gates

文件:206.27 Kbytes Page:5 Pages

TI

德州仪器

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gate

Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f

INTERSIL

CMOS NOR Gate

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre

RENESAS

瑞萨

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

文件:206.27 Kbytes Page:5 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

IC GATE NOR 2CH 4-INP 14DIP

ONSEMI

安森美半导体

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

封装/外壳:14-DIP(0.300",7.62mm) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14DIP 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14SOIC 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

替换型号 功能描述 生产厂家 企业 LOGO 操作

NOR GATE

STMICROELECTRONICS

意法半导体

Dual 4-input NOR Gate

HITACHIHitachi Semiconductor

日立日立公司

Dual 4-input NOR gate

PHILIPS

飞利浦

Dual 4-input NOR gate

PHILIPS

飞利浦

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NOR GATE

RANDE

CD4002产品属性

  • 类型

    描述

  • Function:

    NOR gates

  • Description:

    Dual 4-input NOR gate

  • VCC (V):

    3.0 - 15.0

  • Logic switching levels:

    CMOS

  • Tamb (°C):

    -40~125

  • Nr of pins:

    14

  • Package:

    DIP14/SOP14/TSSOP14

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOIC-14
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
N/A
7786
原装正品现货,原厂订货,可支持含税原型号开票。
NS
23+
DIP
20000
全新原装假一赔十
TI/德州仪器
25+
SOP-14
32360
TI/德州仪器全新特价CD4002BM96即刻询购立享优惠#长期有货
N/A
24+/25+
6710
原装正品现货库存价优
TI
23+
NA
20000
TI
25+
sop
20000
原装
TI
22+
5000
只做原装鄙视假货15118075546
UNKNOWN
23+
NA
9196
专做原装正品,假一罚百!
TI
23+
sop
5000
全新原装,支持实单,非诚勿扰

CD4002数据表相关新闻