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CD4002价格

参考价格:¥0.9678

型号:CD4002BE 品牌:TI 备注:这里有CD4002多少钱,2026年最近7天走势,今日出价,今日竞价,CD4002批发/采购报价,CD4002行情走势销售排行榜,CD4002报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CD4002

2路4输入或非门

The CD4002 is a dual 4-input NOR gate. The outputs are fully buffered for highest noise immunity and pattern insensitivity to output impedance variations.It operates over a recommended VDD power supply range of 3V to 15V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS • Wide supply voltage range from 3V to 15V\n• Fully static operation\n• 5V, 10V, and 15V parametric ratings\n• Standardized symmetrical output characteristics\n• Inputs and outputs are protected against electrostatic effects\n• Specified from -40℃ to +105℃\n• Packaging information: DIP14/SOP14/TSSOP;

I-COREWUXI i-CORE Electronics Co., Ltd

中微爱芯无锡中微爱芯电子有限公司

CD4002

CD4002M/CD4002C Dual 4-Input NOR Gate, CD4012M/CD4012C Dual 4-Input NAND Gate

General Description\nThese NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide suppl Wide supply voltage range 3.0V to 15V\nLow power 10 nW (typ.)\nHigh noise immunity 0.45 VDD (typ.)Applications\nAutomotive\nData terminals\nInstrumentation\nMedical Electronics\nAlarm system\nIndustrial controls\nRemote metering\nComputers;

TI

德州仪器

CD4002

CMOS NOR Gates

文件:206.27 Kbytes Page:5 Pages

TI

德州仪器

CD4002

Dual 4-Input NOR(NAND) Gate

文件:107.87 Kbytes Page:6 Pages

NSC

国半

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BE;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BF;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002BM;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CD4002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:7704403CA;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gate

Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standard Symmetrical Output Characteristics • 100 Tested for Maximum Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Maximum Input Curre

RENESAS

瑞萨

CMOS NOR Gate

Description CD4000BMS - Dual 3 Plus Inverter CD4001BMS - Quad 2 Input CD4002BMS - Dual 4 Input CD4025BMS - Triple 3 Input CD4000BMS, CD4001BMS, CD4002BMS, and CD4025BMS NOR gates provide the system designer with direct implementation of the NOR function and supplement the existing f

INTERSIL

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

丝印代码:CM002B;CMOS NOR Gates

Features: = Propagation delay tima = 60 ns (typ.) at CL =50pF, Vpp=10V = Buffered inputs and outputs = Standardized symmetrical output characteristics = 100% tested for maximum quiescent current at 20 V ® 5-V, 10.V, and 15-V parametric ratings = Maximum input current of 1 uA at 18 V ov

TI

德州仪器

CMOS NOR Gates

文件:206.27 Kbytes Page:5 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

IC GATE NOR 2CH 4-INP 14DIP

ONSEMI

安森美半导体

封装/外壳:14-DIP(0.300",7.62mm) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14DIP 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NOR 2CH 4-INP 14SOIC 集成电路(IC) 门和反相器

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:1.18416 Mbytes Page:18 Pages

TI

德州仪器

CMOS NOR Gates

文件:952.17 Kbytes Page:19 Pages

TI

德州仪器

CMOS NOR Gates

文件:523.679 Kbytes Page:12 Pages

TI

德州仪器

替换型号 功能描述 生产厂家 企业 LOGO 操作

NOR GATE

STMICROELECTRONICS

意法半导体

Dual 4-input NOR Gate

HITACHIHitachi Semiconductor

日立日立公司

Dual 4-input NOR gate

PHILIPS

飞利浦

Dual 4-input NOR gate

PHILIPS

飞利浦

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NOR GATE

RANDE

CD4002产品属性

  • 类型

    描述

  • Function:

    NOR gates

  • Description:

    Dual 4-input NOR gate

  • VCC (V):

    3.0 - 15.0

  • Logic switching levels:

    CMOS

  • Tamb (°C):

    -40~125

  • Nr of pins:

    14

  • Package:

    DIP14/SOP14/TSSOP14

更新时间:2026-5-16 11:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
SOIC-14
4987
强势库存!绝对原装公司现货!
ON
25+23+
DIP
30368
绝对原装正品全新进口深圳现货
TI
25+
N/A
7786
原装正品现货,原厂订货,可支持含税原型号开票。
TI/德州仪器
2025+
DIP
5000
原装进口价格优 请找坤融电子!
RCA
23+
DIP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TI
22+
5000
只做原装鄙视假货15118075546
26+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
Harris Corporation
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
RCA
2308+
DIP
4862
只做进口原装!假一赔百!自己库存价优!
TI
23+
sop
12800
公司只有原装 欢迎来电咨询。

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