Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE - BSP31 - BSP41 BSP33 - BSP43 PARTMARKING DETAIL - Device type in full

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications.

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ NPN COMPLEMENTS ARE BSP40, BSP41, B

PNP medium power transistors

FEATURES •High current (max. 1 A) •Low voltage (max. 80 V). APPLICATIONS •Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43.

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

Green device available.

Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RD

SIPMOS횘 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS짰 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated

P-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

SIPMOS Small-Signal-Transistor

Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

SIPMOS Small-Signal-Transistor

Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249221

SIPMOS Small-Signal-Transistor

Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249221

SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V

SIPMOS Small-Signal-Transistor

Features • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V

SIPMOS Small-Signal Transistor

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V

P-Channel 60-V (D-S) MOSFET

文件：953.86 Kbytes Page：7 Pages

SIPMOS Small-Signal-Transistor

文件：13.0991 Mbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：13.0991 Mbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：126.58 Kbytes Page：8 Pages

SIPMOS
Small-Signal-Tran sistor

文件：407.4 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：126.58 Kbytes Page：8 Pages

SIPMOS
Small-Signal-Tran sistor

文件：407.4 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor Feature

文件：440.47 Kbytes Page：8 Pages

SIPMOS Small-Signal-Transistor

文件：411.74 Kbytes Page：8 Pages

SIPMOS Small-Signal-Transistor

文件：411.74 Kbytes Page：8 Pages

SIPMOS Small-Signal-Transistor

文件：559.9 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor

文件：559.9 Kbytes Page：9 Pages

包装：散装 描述：ASSY FILTER BSP31 RC 计算机设备 配件

包装：散装 描述：ASSY FILTER BSP31 RC 计算机设备 配件