SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

P-Channel SIPMOS Small-Signal Transistor

丝印代码：BSP316P；P-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

20V-250V P-Channel Power MOSFET

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated

SIPMOS Small-Signal-Transistor

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SIPMOS
Small-Signal-Tran sistor

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SIPMOS Small-Signal-Transistor

文件：126.58 Kbytes Page：8 Pages

SIPMOS
Small-Signal-Tran sistor

文件：407.4 Kbytes Page：9 Pages

SIPMOS Small-Signal-Transistor Feature

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High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

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